Zvinhu zvine mativi maviri, zvakaita segraphene, zvinokwezva kune ese ari maviri mashandisirwo e semiconductor uye matsva muma electronics anochinjika. Zvisinei, simba guru rekukwesha kwegraphene rinoita kuti pave nekupwanyika pa low strain, zvichiita kuti zvive zvakaoma kushandisa hunyanzvi hwayo hwe electronic muma electronics anotambanudzwa. Kuti tikwanise kushanda zvakanaka kwema transparent graphene conductors, takagadzira graphene nanoscrolls pakati pe stacked graphene layers, anonzi multilayer graphene/graphene scrolls (MGGs). Pasi pekukwesha, mamwe ma scroll akabatanidza nzvimbo dzakapatsanurwa dzegraphene kuti dzirambe dzakatenderedza network iyo yakagonesa conductivity yakanaka pama high strains. Trilayer MGGs dzakatsigirwa pa elastomers dzakachengeta 65% ye original conductance yavo pa 100% strain, iyo yakatarisana negwara rekuyerera kwe current, nepo trilayer films dze graphene dzisina nanoscrolls dzakachengeta 25% chete ye starting conductance yavo. Transistor inotambanudzwa yese-kabhoni yakagadzirwa ichishandisa maMGG sezvo maerekitirodhi akaratidza kutumirwa kwe >90% uye akachengetedza 60% yesimba rayo rekutanga pa120% strain (yakafanana nekwainoenda charge transport). Aya matransistor anotambanudzwa zvakanyanya uye akajeka anogona kugonesa optoelectronics dzakasimba dzinotambanudzwa.
Maelectronics anotambanudzwa anopenya inzvimbo iri kukura ine mashandisirwo akakosha mumasisitimu epamusoro-soro akabatanidzwa (1, 2) pamwe nekukwanisa kubatana nemaoptoelectronics anotambanudzwa (3, 4) kugadzira marobhoti akapfava uye madhiraivha. Graphene inoratidza hunhu hunodiwa hweukobvu hweatomu, kujeka kwakanyanya, uye kufambisa simba kwakanyanya, asi kushandiswa kwayo mumashandisirwo anotambanudzwa kwakadziviswa nekatsika kayo kekutsemuka pamitsetse midiki. Kukunda miganhu yemuchina wegraphene kunogona kugonesa mashandiro matsva mumidziyo inotambanudzwa inopenya.
Hunhu hwakasiyana hwegraphene hunoita kuti ive yakakodzera chizvarwa chinotevera chemaelectrode ekufambisa magetsi anoonekera (5, 6). Kana ichienzaniswa ne transparent conductor inonyanya kushandiswa, indium tin oxide [ITO; 100 ohms/square (sq) pa 90% transparency ], monolayer graphene inorimwa ne chemical vapor deposition (CVD) ine musanganiswa wakafanana we sheet resistance (125 ohms/sq) uye transparency (97.4%) (5). Pamusoro pezvo, graphene films dzine flexibility inoshamisa zvichienzaniswa neITO (7). Semuenzaniso, pa plastic substrate, conductance yayo inogona kuchengetwa kunyangwe kune bend radius ye curvature diki se 0.8 mm (8). Kuti iwedzere kushanda kwayo kwemagetsi se transparent flexible conductor, mabasa ekare akagadzira graphene hybrid materials ane one-dimensional (1D) silver nanowires kana carbon nanotubes (CNTs) (9–11). Uyezve, graphene yakashandiswa semaelectrode e mixed dimensional heterostructural semiconductors (senge 2D bulk Si, 1D nanowires/nanotubes, uye 0D quantum dots) (12), flexible transistors, solar cells, uye light-emitting diodes (LEDs) (13–23).
Kunyangwe graphene yakaratidza mhedzisiro yakanaka yemagetsi anochinjika, kushandiswa kwayo mumagetsi anochinjika kwakaganhurirwa nehunhu hwayo hwemakanika (17, 24, 25); graphene ine kuomarara kwe340 N/m uye modulus yeYoung ye0.5 TPa (26). Network yakasimba yekabhoni-kabhoni haipe nzira dzekubvisa simba dzesimba rinoshandiswa uye nekudaro inotsemuka nyore nyore pamatambudziko asingasviki 5%. Semuenzaniso, CVD graphene inotamisirwa kune polydimethylsiloxane (PDMS) elastic substrate inogona kungochengetedza conductivity yayo pamatambudziko asingasviki 6% (8). Kuverengera kwedzidziso kunoratidza kuti kupwanyika uye kubatana pakati pezvikamu zvakasiyana kunofanira kuderedza kuomarara (26). Nekuisa graphene muzvikamu zvakawanda, zvinonzi iyi bi- kana trilayer graphene inogona kutambanudza kusvika kumatambudziko 30%, ichiratidza shanduko yekudzivirira ka13 pane iyo monolayer graphene (27). Zvisinei, kutambanudza uku kuchiri kushoma zvakanyanya pane ma onductor emazuva ano anotambanudza (28, 29).
Matransistor akakosha mukushandiswa kunotambanudzwa nekuti anogonesa kuverenga kwemasensa kwakanyatsogadzirwa uye kuongorora masaini (30, 31). Matransistor ari paPDMS ane multilayer graphene sema source/drain electrodes uye zvinhu zvechiteshi anogona kuchengetedza mashandiro emagetsi kusvika ku5% strain (32), iyo iri pasi pemutengo unodiwa (~50%) yemasensa anopfekwa ekutarisa hutano uye ganda remagetsi (33, 34). Munguva pfupi yapfuura, nzira ye graphene kirigami yakaongororwa, uye transistor yakavharirwa ne liquid electrolyte inogona kutambanudzwa kusvika ku240% (35). Zvisinei, nzira iyi inoda suspended graphene, izvo zvinoita kuti maitiro ekugadzira ave akaomarara.
Pano, tinowana zvishandiso zve graphene zvinotambanudzwa zvakanyanya nekubatanidza mipumburu ye graphene (yakareba ~1 kusvika 20 μm, yakafara ~0.1 kusvika 1 μm, uye yakakwirira ~10 kusvika 100 nm) pakati pezvikamu zve graphene. Tinofungidzira kuti mipumburu iyi ye graphene inogona kupa nzira dzinofambisa mhepo kuti dzivhare mitswe mumapepa e graphene, nokudaro dzichichengetedza kufambisa mhepo kwakanyanya pasi pekumanikidzwa. Mipumburu ye graphene haidi synthesis kana process yekuwedzera; inoumbwa zvechisikigo panguva yekushandiswa kwemvura. Nekushandisa multilayer G/G (graphene/graphene) mipumburu (MGGs) mipumburu ye graphene inotambanudzwa (source/drain and gate) uye semiconducting CNTs, takakwanisa kuratidza transistors dze carbon transistors dzakajeka uye dzinotambanudzwa zvakanyanya, dzinogona kutambanudzwa kusvika 120% strain (yakafanana negwara rekufambisa charge) uye kuchengetedza 60% yemagetsi adzo ekutanga. Iyi ndiyo transistor ye carbon-based transparent inotambanudzwa zvakanyanya kusvika parizvino, uye inopa magetsi akakwana ekufambisa LED isina kugadzirwa.
Kuti tigone kushandisa maelectrode egraphene anotambanudzwa munzvimbo yakakura, takasarudza graphene yakakurirwa neCVD paCu foil. Cu foil yakasungirirwa pakati pechubhu yeCVD quartz kuti ibvumire kukura kwegraphene kumativi ese, zvichigadzira zvivakwa zveG/Cu/G. Kuti titamise graphene, takatanga taisa jira rakatetepa repoly(methyl methacrylate) (PMMA) kudzivirira rumwe rutivi rwegraphene, rwatakatumidza kuti topside graphene (zvakasiyana nerumwe rutivi rwegraphene), uye mushure mezvo, firimu rese (PMMA/top graphene/Cu/bottom graphene) rakanyikwa mu (NH4)2S2O8 solution kuti ribvise Cu foil. Graphene yepasi isina PMMA coating ichava nemakatsemuka uye zvikanganiso zvinobvumira etchant kupinda nepakati (36, 37). Sezvakaratidzwa muMufananidzo 1A, pasi pekumanikidzwa kwepamusoro, nzvimbo dzegraphene dzakaburitswa dzakaputirwa kuita mipumburu uye dzakazobatanidzwa pafirimu yasara yeG/PMMA. Mipumburu yeG/G yepamusoro inogona kutamisirwa kune chero substrate, senge SiO2/Si, girazi, kana soft polymer. Kudzokorora maitiro aya ekutamisa kakawanda pane substrate imwe chete kunopa maumbirwo eMGG.
(A) Mufananidzo wemaitiro ekugadzira maMGG seelectrode inotambanudzwa. Panguva yekufambisa graphene, graphene yekumashure paCu foil yakatyoka pamiganhu nezvikanganiso, yakamonerwa kuita maumbirwo asina kurongeka, uye yakasungirirwa zvakasimba pamafirimu epamusoro, ichigadzira nanoscrolls. Katuni yechina inoratidza chimiro cheMGG chakaiswa muzvikamu. (B naC) Kutsanangurwa kweTEM kwepamusoro-soro kweMGG yemonolayer, ichitarisa pamonolayer graphene (B) nenzvimbo yescroll (C), zvichiteerana. Chinyorwa che (B) mufananidzo wekukura kwakaderera unoratidza chimiro chose cheMGG yemonolayer paTEM grid. Zvikamu zve (C) maprofile esimba akatorwa pamwe chete nemabhokisi erectangular anoratidzwa mumufananidzo, uko daro riri pakati pemaatomu riri 0.34 ne0.41 nm. (D) Carbon K-edge EEL spectrum ine hunhu hwegraphitic π* uye σ* peaks dzakanyorwa. (E) Mufananidzo weSectional AFM wemonolayer G/G scrolls ine hurefu hweprofile pamutsetse weyero une madotsi. (F kusvika I) Optical microscopy uye AFM image s ye trilayer G isina (F na H) uye ine scrolls (G na I) pa 300-nm-thick SiO2/Si substrates, zvichiteerana. Mipumburu inomiririra nemakwinya zvakanyorwa kuti zviratidze musiyano wavo.
Kuti tione kuti mipumburu iyi yakamonerwa negraphene, takaita zvidzidzo zvehigh-resolution transmission electron microscopy (TEM) uye electron energy loss (EEL) spectroscopy pazvikamu zve monolayer top-G/G scroll. Mufananidzo 1B unoratidza chimiro chehexagonal che monolayer graphene, uye chikamu chiri mukati mefirimu rakazara rakafukidzwa negomba rimwe chete reTEM grid. Monolayer graphene inotenderera grid yakawanda, uye mamwe ma graphene flakes aripo ane ma stacks akawanda ema hexagonal rings anoonekwa (Mufananidzo 1B). Nekuswedera muscroll imwe neimwe (Mufananidzo 1C), takaona huwandu hwakawanda hwe graphene lattice fringes, ne lattice spacing iri pakati pe 0.34 kusvika 0.41 nm. Kuyera uku kunoratidza kuti ma flakes akamonerwa zvisina kurongeka uye haasi graphite yakakwana, ine lattice spacing ye 0.34 nm mu "ABAB" layer stacking. Mufananidzo 1D unoratidza carbon K-edge EEL spectrum, apo peak pa285 eV inotangira kubva kuπ* orbital uye imwe inenge 290 eV inokonzerwa nekuchinja kweσ* orbital. Zvinogona kuonekwa kuti sp2 bonding ndiyo inonyanya kukosha muchimiro ichi, zvichiratidza kuti scrolls dzine graphitic yakawanda.
Mifananidzo yeOptical microscopy neatomic force microscopy (AFM) inopa ruzivo nezvekupararira kwegraphene nanoscrolls muMGGs (Mufananidzo 1, E kusvika G, uye mafig. S1 na S2). Mipumburu inoparadzirwa zvisina kurongeka pamusoro, uye huwandu hwayo hwemukati hunowedzera zvakaenzana nehuwandu hwezvikamu zvakaunganidzwa. Mipumburu yakawanda inosanganiswa kuita mapfundo uye inoratidza hurefu husina kufanana pakati pe10 kusvika 100 nm. Yakareba 1 kusvika 20 μm uye yakafara 0.1 kusvika 1 μm, zvichienderana nehukuru hwemaflakes avo ekutanga egraphene. Sezvakaratidzwa muMufananidzo 1 (H na I), mipumburu ine saizi yakakura kupfuura makwinya, zvichiita kuti pave nekubatana kwakaoma pakati pezvikamu zvegraphene.
Kuti tiyere hunhu hwemagetsi, takagadzira mapatani emafirimu egraphene ane kana asina magadzirirwo escroll uye layer stacking mu 300-μm-wide uye 2000-μm-long strips tichishandisa photolithography. Two-probe resistances sebasa rekumanikidzwa kwakayerwa pasi pemamiriro ekunze. Kuvapo kwema scrolls kwakaderedza resistivity ye monolayer graphene ne80% nekuderera kwe2.2% mu transmittance (mufananidzo S4). Izvi zvinosimbisa kuti nanoscrolls, dzine high current density kusvika 5 × 107 A/cm2 (38, 39), dzinopa mupiro wakanaka kwazvo wemagetsi kuMGGs. Pakati pe mono-, bi-, uye trilayer plain graphene neMGGs, trilayer MGG ine conductance yakanakisa ine transparency inosvika 90%. Kuti tienzanise nedzimwe nzvimbo dze graphene dzakataurwa mumabhuku, takayerawo four-probe sheet resistances (mufananidzo S5) uye takadzinyora sebasa rekutumira pa550 nm (mufananidzo S6) muMufananidzo 2A. MGG inoratidza conductivity yakafanana kana yakakwirira uye kujeka kupfuura artificially stacked multila yer plain graphene uye reduced graphene oxide (RGO) (6, 8, 18). Cherechedza kuti sheet resistances ye artificially stacked multilayer plain graphene kubva mumabhuku yakakwira zvishoma pane yeMGG yedu, zvichida nekuda kwekusakura kwavo uye nzira yekutumira.
(A) Kuramba kwepepa remapurobe mana kana kupindirana nekutumira pa550 nm kune mhando dzakasiyana dzegraphene, apo masikweya matema anomiririra mono-, bi-, uye trilayer MGGs; madenderedzwa matsvuku netriangles dzebhuruu zvinoenderana nemultilayer plain graphene yakakurirwa paCu naNi kubva muzvidzidzo zvaLi et al. (6) naKim et al. (8), zvichiteerana, uye yakazoendeswa kuSiO2/Si kana quartz; uye triangles dzegirini imhando dzeRGO padanho rakasiyana rekudzika kubva mukudzidza kwaBonaccorso et al. (18). (B naC) Kuchinja kwekudzivirira kwakajairwa kwemono-, bi- uye trilayer MGGs naG sebasa re perpendicular (B) uye parallel (C) strain kuenda kunzira yekuyerera kwemagetsi. (D) Kuchinja kwekudzivirira kwakajairwa kwe bilayer G (tsvuku) uye MGG (nhema) pasi pe cyclic strain loading inosvika 50% perpendicular strain. (E) Kuchinja kwekudzivirira kwakajairwa kwetrilayer G (tsvuku) uye MGG (nhema) pasi pe cyclic strain loading inosvika 90% parallel strain. (F) Kuchinja kwakajairwa kwe capacitance ye mono-, bi- uye trilayer G uye bi- uye trilayer MGGs sebasa rekumanikidzwa. Chinyorwa chiri mukati ndicho chimiro che capacitor, uko polymer substrate iri SEBS uye polymer dielectric layer iri 2-μm-thick SEBS.
Kuti tiongorore mashandiro eMGG zvichienderana nekustrain, takatamisa graphene kuenda ku thermoplastic elastomer styrene-ethylene-butadiene-styrene (SEBS) substrates (~2 cm upamhi uye ~5 cm kureba), uye conductivity yakayerwa sezvo substrate yakatambanudzwa (ona Zvinhu uye Nzira) zvese zvakamira uye zvakaenzana negwara rekuyerera kwemagetsi (Mufananidzo 2, B naC). Maitiro emagetsi anoenderana nekustrain akavandudzika nekubatanidzwa kwe nanoscrolls uye kuwedzera huwandu hwe graphene layers. Semuenzaniso, kana strain yakamira ... Kuti tienzanise (Mufananidzo 2D), kusimba kwefirimu re plain bilayer graphene kwakawedzera kanokwana ka7.5 mushure me ~700 cycles pa 50% perpendicular strain uye kwakaramba kuchikwira nekusimba mu cycle yega yega. Kune rumwe rutivi, kusimba kwe MGG ye bilayer kwakawedzera kanokwana ka2.5 mushure me ~700 cycles. Kushandisa kusvika 90% strain munzira yakafanana, kusimba kwe trilayer graphene kwakawedzera ~100 nguva mushure me 1000 cycles, nepo kuri ~8 chete mu trilayer MGG (Mufananidzo 2E). Mhedzisiro ye cycling inoratidzwa mumufananidzo S7. Kuwedzera nekukurumidza kwesimba munzira yakafanana imhaka yekuti kurongeka kwemakatse kwakanangana negwara rekuyerera kwemagetsi. Kutsauka kwesimba panguva yekurodha nekuburitsa simba kunokonzerwa nekudzoreredzwa kwe viscoelastic kweSEBS elastomer substrate. Kuramba kwakasimba kweMGG strips panguva yekufamba nebhasikoro kunokonzerwa nekuvapo kwemipumburu mikuru inogona kuvharira zvikamu zvakatsemuka zvegraphene (sezvakaratidzwa neAFM), zvichibatsira kuchengetedza nzira inotenderera. Chiitiko ichi chekuchengetedza conductivity nenzira inotenderera chakambotaurwa kare kune mafirimu esimbi akatsemuka kana semiconductor pa elastomer substrates (40, 41).
Kuti tiongorore mafirimu aya akavakirwa pagraphene sema gate electrodes mumidziyo inotambanudzwa, takafukidza graphene layer neSEBS dielectric layer (2 μm gobvu) uye takatarisa shanduko ye dielectric capacitance sebasa rekustrain (ona Mufananidzo 2F uye Zvimwe Zvekushandisa kuti uwane rumwe ruzivo). Takaona kuti capacitances dzine plain monolayer uye bilayer graphene electrodes dzakadzikira nekukurumidza nekuda kwekurasikirwa kwe in-plane conductivity ye graphene. Kusiyana neizvi, capacitances dzakavharirwa neMGGs pamwe ne plain trilayer graphene zvakaratidza kuwedzera kwe capacitance ne strain, izvo zvinotarisirwa nekuda kwekudzikira kwe dielectric thickness ne strain. Kuwedzera kwaitarisirwa kwe capacitance kwakabatana zvakanaka ne MGG structure (mufananidzo S8). Izvi zvinoratidza kuti MGG yakakodzera se gate electrode ye transistors dzinotambanudzwa.
Kuti tiongorore zvakanyanya basa re1D graphene scroll pakutsungirira kwesimba remagetsi uye kudzora zviri nani kupatsanurwa pakati pema layers egraphene, takashandisa maCNT akaputirwa nespray kutsiva ma graphene scroll (ona Zvimwe Zvishandiso). Kuti titevedzere MGG structures, takaisa ma densities matatu eCNTs (ndiko kuti, CNT1).
(A kusvika C) Mifananidzo yeAFM yehuremu hutatu hwakasiyana hweCNTs (CNT1)
Kuti tinzwisise kugona kwavo sema electrode emagetsi anotambanudzwa, takaongorora zvakarongeka mamiriro eMGG neG-CNT-G pasi pekumanikidzwa. Optical microscopy uye scanning electron microscopy (SEM) haisi nzira dzinoshanda dzekutarisa nekuti ese ari maviri haana kusiyana kwemavara uye SEM inoratidzwa mifananidzo panguva yekuskena ma electron apo graphene iri pa polymer substrates (mifananidzo S9 neS10). Kuti tione nzvimbo ye graphene iri pasi pekumanikidzwa, takaunganidza zviyero zveAFM pa trilayer MGGs ne plain graphene mushure mekuchinjirwa kune substrates dzakatetepa (~0.1 mm gobvu) uye elastic SEBS. Nekuda kwezvikanganiso zviri mukati meCVD graphene uye kukuvara kwekunze panguva yekufambisa, maburi anogadzirwa pa strained graphene, uye nekumanikidzwa kuri kuwedzera, maburi acho akawedzera (Mufananidzo 4, A kusvika D). Zvichienderana nechimiro che stacking chema electrodes akavakirwa pa carbon, maburi anoratidza maitiro akasiyana (mufananidzo S11) (27). Kuwanda kwenzvimbo yemitswe (inotsanangurwa senzvimbo yemitswe/nzvimbo yakaongororwa) yegraphene ine layer yakawanda kushoma pane kwegraphene ine layer imwe mushure mekusvuta, izvo zvinoenderana nekuwedzera kwekufambisa kwemagetsi kweMGGs. Kune rumwe rutivi, mitswe inowanzoonekwa ichibatanidza mitswe, zvichipa nzira dzekuwedzera dzekufambisa mufirimu yakasvuta. Semuenzaniso, sezvakanyorwa mumufananidzo weMufananidzo 4B, mutswe wakafara wakayambuka pamusoro pemutswe uri muMGG ine trilayer, asi hapana mutswe wakaonekwa mu plain graphene (Mufananidzo 4, E kusvika H). Saizvozvowo, CNTs dzakabatanidzawo mitswe iri mugraphene (mufananidzo S11). Kuwanda kwenzvimbo yemitswe, kusvuta nzvimbo, uye kuomarara kwemafirimu zvakapfupikiswa muMufananidzo 4K.
(A kusvika H) Mifananidzo yeAFM iri munzvimbo ine mipumburu mitatu yeG/G (A kusvika D) uye mipumburu mitatu yeG (E kusvika H) paSEBS yakatetepa (~0.1 mm gobvu) elastomer pa0, 20, 60, uye 100% strain. Mipumburu inomiririrwa nemiseve yakanongedzwa. Mifananidzo yese yeAFM iri munzvimbo ye15 μm × 15 μm, ichishandisa scale bar yakafanana neyakanyorwa. (I) Simulation geometry yema electrodes egraphene ane mapatani paSEBS substrate. (J) Simulation contour mepu ye maximal principal logarithmic strain mu monolayer graphene uye SEBS substrate pa 20% external strain. (K) Kuenzanisa kwe crack area density (red column), scroll area density (yellow column), uye surface roughness (blue column) ye graphene structures dzakasiyana.
Kana mafirimu eMGG akatambanudzwa, pane imwe nzira yakakosha yekuti mipumburu inogona kubatanidza nzvimbo dzakatsemuka dzegraphene, zvichichengetedza network inotenderera. Mipumburu yegraphene inovimbisa nekuti inogona kuva makumi ema micrometer pakureba uye nekudaro inokwanisa kubatanidza mipumburu inowanzo kusvika pachiyero che micrometer. Uyezve, nekuti mipumburu ine graphene yakawanda, inotarisirwa kuti ive neresistance shoma. Kana tichienzanisa, network dzeCNT dzakatetepa (dzinotumirwa zvishoma) dzinodiwa kuti dzipe kugona kwakafanana kwekufambisa, sezvo CNTs dziri diki (kazhinji ma micrometer mashoma pakureba) uye dzisingadhuri kupfuura mipumburu. Kune rumwe rutivi, sezvakaratidzwa mumufananidzo S12, nepo graphene ichitsemuka panguva yekutambanudza kuti igone kusvuta, mipumburu haitsemuke, zvichiratidza kuti yekupedzisira inogona kunge ichitsvedza pagraphene iri pasi. Chikonzero chekuti hadzitsemuke chingangove chiri nekuda kwechimiro chakaputirwa, chakagadzirwa nezvidimbu zvakawanda zvegraphene (~1 kusvika 2 0 μm kureba, ~0.1 kusvika 1 μm yakafara, uye ~10 kusvika 100 nm yakakwirira), iyo ine modulus inoshanda zvakanyanya kupfuura graphene ine layer imwe chete. Sezvakataurwa naGreen naHersam (42), network dzesimbi dzeCNT (dhayamita yechubhu ye1.0 nm) dzinogona kuwana resistance yakaderera yepepa <100 ohms/sq pasinei nekuramba kukuru kwejunction pakati peCNTs. Tichifunga kuti graphene scrolls dzedu dzine upamhi hwe0.1 kusvika 1 μm uye kuti G/G scrolls dzine nzvimbo dzakakura dzekubata kupfuura CNTs, resistance yekubata nenzvimbo yekubata pakati pegraphene negraphene scrolls haifanirwe kunge iri zvinhu zvinogumira kuchengetedza conductivity yakakwira.
Graphene ine modulus yakakwira zvikuru kupfuura substrate yeSEBS. Kunyangwe ukobvu hunoshanda hwe graphene electrode hwakaderera zvikuru pane hwe substrate, kuomarara kwe graphene kunodarika ukobvu hwayo kwakaenzana nekwe substrate (43, 44), zvichikonzera mhedzisiro iri pakati nepakati yechitsuwa. Takatevedzera deformation ye graphene ine ukobvu hwe 1-nm pa SEBS substrate (ona Zvimwe Zvinyorwa kuti uwane rumwe ruzivo). Zvichienderana nemhedzisiro ye simulation, kana 20% strain ikashandiswa paSEBS substrate kunze, avhareji strain mu graphene i ~6.6% (Mufananidzo 4J nemufananidzo S13D), izvo zvinoenderana nekuyedzwa kwekuyedza (ona mufananidzo S13). Takaenzanisa strain iri mu patterned graphene nenzvimbo dze substrate tichishandisa optical microscopy uye takaona kuti strain iri mu substrate region iri kanenge kaviri strain iri mu graphene region. Izvi zvinoratidza kuti strain inoshandiswa pa graphene electrode patterns inogona kuvharirwa zvakanyanya, ichiumba graphene stiff islands pamusoro peSEBS (26, 43, 44).
Saka, kugona kwema MGG electrodes kuchengetedza conductivity yakakwira pasi pekumanikidzwa kwakanyanya kunogona kugoneswa nenzira mbiri huru: (i) Mipumburu inogona kubatanidza nzvimbo dzakaparadzana kuti ichengetedze nzira yekufambisa inofambisa, uye (ii) machira/elastomer e graphene akawanda anogona kutsvedza pamusoro peimwe neimwe, zvichikonzera kumanikidzwa kushoma pama electrodes e graphene. Kune akawanda ma layers e graphene akatamiswa pa elastomer, ma layers haana kubatana zvakasimba, izvo zvinogona kutsvedza zvichienderana nekumanikidzwa (27). Mipumburu yakawedzerawo kuomarara kwema layers e graphene, izvo zvinogona kubatsira kuwedzera kuparadzaniswa pakati pe graphene layers uye nekudaro zvinogonesa kutsvedza kwema layers e graphene.
Zvishandiso zvekabhoni zvese zvinotsvakwa nemufaro nekuda kwemutengo wakaderera uye throughput yakakwira. Muchiitiko chedu, ma transistors ekabhoni ese akagadzirwa achishandisa gate re graphene repasi, top graphene source/drain contact, sorted CNT semiconductor, uye SEBS se dielectric (Mufananidzo 5A). Sezvakaratidzwa muMufananidzo 5B, mudziyo wekabhoni wese une CNTs se source/drain negate (mudziyo wepasi) hauna kujeka kupfuura mudziyo une graphene electrodes (mudziyo wepamusoro). Izvi zvinodaro nekuti CNT networks dzinoda ukobvu hwakakura uye, nekudaro, optical transmittances shoma kuti uwane sheet resistances dzakafanana nedze graphene (Mufananidzo S4). Mufananidzo 5 (C naD) unoratidza representative transfer and output curves before strain ye transistor yakagadzirwa ne bilayer MGG electrodes. Channel width and length ye transistor isina kumanikidzwa yaive 800 ne 100 μm, zvichiteerana. Chiyero che on/off chakayerwa chakakura kupfuura 103 ne on and off currents pamazinga e 10−5 ne 10−8 A, zvichiteerana. Curve yekubuda inoratidza nzira dzakakodzera dzekubatanidza ma "linear" uye "sa" ne "clear gate-voltage dependence", zvichiratidza kubatana kwakakodzera pakati peCNTs nema "graphene electrodes" (45). Kuramba kubatana nema "graphene electrodes" kwakaonekwa kuri pasi pane kune "evaporated Au film" (ona mufananidzo S14). Kufamba kwe "saturation" kwe "stretchable transistor" kuri pa5.6 cm2/Vs, kwakafanana nekwe "polymer-sorted CNT transistors" pa "rigid Si substrates" dzine 300-nm SiO2 se "dielectric layer". Kuvandudzwa kwekufamba kunogoneka ne "optimized tube density" nedzimwe mhando dzema "tubes" (46).
(A) Chirongwa chetransistor inotambanudzwa yakavakirwa pagraphene. SWNTs, machubhu ecarbon nanotubes ane madziro maviri. (B) Mufananidzo wetransistor dzinotambanudzwa dzakagadzirwa nemaelectrodes egraphene (kumusoro) uye maelectrodes eCNT (pasi). Musiyano wekujeka unoonekwa zvakajeka. (C naD) Makove ekutumira uye kubuda kwetransistor yakavakirwa pagraphene paSEBS isati yastrainwa. (E naF) Makove ekutumira, on and off current, on/off ratio, uye kufamba kwetransistor yakavakirwa pagraphene pamhando dzakasiyana.
Kana mudziyo wakajeka, une kabhoni yese wakatambanudzwa munzira yakatarisana nekwaiendeswa charge, kuora kushoma kwakaonekwa kusvika pa120% strain. Panguva yekutambanudza, kufamba kwakaramba kuchidzikira kubva pa5.6 cm2/Vs pa0% strain kusvika pa2.5 cm2/Vs pa120% strain (Mufananidzo 5F). Takaenzanisawo mashandiro e transistor nehurefu hwakasiyana hwe channel (ona tafura S1). Zvinonyanya kukosha, pa strain yakakura se105%, ma transistor ese aya achiri kuratidza chiyero chepamusoro che on/off ( >103) uye kufamba ( >3 cm2/Vs). Pamusoro pezvo, takapfupikisa basa rese razvino pama transistor ese ane kabhoni yese (ona tafura S2) (47–52). Nekugadzirisa kugadzirwa kwemudziyo pama elastomers nekushandisa ma MGG se contacts, ma transistor edu ane kabhoni yese anoratidza kushanda kwakanaka maererano nekufamba uye hysteresis pamwe nekugona kutambanudza zvakanyanya.
Sekushandisa transistor inopenya zvizere uye inotambanudzwa, takaishandisa kudzora switching ye LED (Mufananidzo 6A). Sezvakaratidzwa muMufananidzo 6B, LED yegirini inogona kuonekwa zvakajeka kuburikidza nechinhu chinotambanudzwa chose chakaiswa pamusoro chaipo. Painotambanudzwa kusvika ~100% (Mufananidzo 6, C naD), simba remwenje we LED harichinji, izvo zvinoenderana nekushanda kwe transistor kwakatsanangurwa pamusoro (ona firimu S1). Uyu ndiwo mushumo wekutanga wezvikamu zvekudzora zvinotambanudzwa zvakagadzirwa uchishandisa ma electrodes e graphene, zvichiratidza mukana mutsva wemagetsi anotambanudzwa e graphene.
(A) Denderedzwa re transistor yekufambisa LED. GND, pasi. (B) Mufananidzo we transistor inotambanudzwa uye inoonekera ye all-carbon pa 0% strain yakaiswa pamusoro pe LED yegirini. (C) Transistor inopenya uye inotambanudzwa ye all-carbon inoshandiswa kushandura LED iri kuiswa pamusoro pe LED pa 0% (kuruboshwe) uye ~100% strain (kurudyi). Miseve michena inonongedza sezviratidzo zveyero pachishandiso kuratidza shanduko yedaro iri kutatamurwa. (D) Kutarisa parutivi kwe transistor yakatambanudzwa, LED ichisundirwa mu elastomer.
Mukupedzisa, takagadzira chimiro chegraphene chinoyerera chinochengetedza conductivity yakakwira pasi pemhando huru sema electrodes anotambanudzwa, zvichigoneswa ne graphene nanoscrolls dziri pakati pezvikamu zve graphene zvakaunganidzwa. Aya ma electrode e MGG e bi- ne trilayer ari pa elastomer anogona kuchengetedza 21 ne65%, zvichiteerana, ye 0% strain conductivity yavo pa strain yakakwira kusvika 100%, zvichienzaniswa nekurasikirwa kwakazara kwe conductivity pa 5% strain yema electrodes e graphene akajairika. Nzira dzekuwedzera dze conductive dze graphene scrolls pamwe nekudyidzana kusina kusimba pakati pezvikamu zvakatamiswa zvinobatsira pakugadzikana kwepamusoro kwe conductivity pasi pe strain. Takashandisa zvakare chimiro ichi che graphene kugadzira transistors dzinotambanudzwa dzese-carbon. Kusvika pari zvino, iyi ndiyo transistor inotambanudzwa yakavakirwa pa graphene ine kujeka kwakanakisa pasina kushandisa buckling. Kunyangwe chidzidzo ichi chakaitwa kuti graphene igone kugonesa electronics dzinotambanudzwa, tinotenda kuti nzira iyi inogona kuwedzerwa kune zvimwe zvinhu zve 2D kuti igone kugonesa 2D electronics dzinotambanudzwa.
CVD graphene yakakura yakakuriswa pamapuranga eCu (99.999%; Alfa Aesar) pasi pekumanikidzwa kwakasimba kwe0.5 mtorr ne50–SCCM (standard cubic centimeter per minute) CH4 uye 20–SCCM H2 sezvinotungamira pa1000°C. Mativi ese eCu foil akafukidzwa ne monolayer graphene. Rutivi rutete rwePMMA (2000 rpm; A4, Microchem) rwakaputirwa kudivi rimwe reCu foil, zvichigadzira chimiro chePMMA/G/Cu foil/G. Mushure mezvo, firimu rese rakanyikwa mu 0.1 M ammonium persulfate [(NH4)2S2O8] solution kwemaawa maviri kuti ibvise Cu foil. Munguva iyi, graphene isina kudzivirirwa yekumashure yakatanga yakabvaruka pamiganhu yegorosi ndokuzopetwa kuita mipumburu nekuda kwekumanikidzwa kwepamusoro. Mipumburu yakasungirirwa pafirimu repamusoro rePMMA rinotsigirwa nePMMA, ichigadzira mipumburu yePMMA/G/G. Mafirimu acho akazosukwa mumvura yakabviswa maion kakawanda ndokuiswa pachinhu chakatarwa, senge SiO2/Si kana purasitiki. Pakangooma firimu rakabatanidzwa pachinhu chakaiswa, sample yacho yakanyikwa muacetone, 1:1 acetone/IPA (isopropyl alcohol), uye IPA kwemasekondi makumi matatu ega ega kuti ibvise PMMA. Mafirimu acho aipiswa pa100°C kwemaminitsi gumi nemashanu kana kuchengetwa muvacuum husiku hwese kuti abvise mvura yakavharirwa isati yaiswa imwe G/G scroll. Danho iri raive rekudzivirira kubviswa kwegraphene film kubva pachinhu chakaiswa uye kuona kuti MGGs dzakazara panguva yekuburitswa kwePMMA carrier layer.
Maumbirwo eMGG structure akaonekwa achishandisa optical microscope (Leica) uye scanning electron microscope (1 kV; FEI). Atomic force microscope (Nanoscope III, Digital Instrument) yakashandiswa mu tapping mode kuti ione zvakadzama zveG scrolls. Kujeka kwefirimu kwakaedzwa ne ultraviolet-visible spectrometer (Agilent Cary 6000i). Pakuyedzwa apo strain yaive munzira yakatarisana nekuyerera kwe current, photolithography neO2 plasma zvakashandiswa kugadzira mapatani e graphene kuita strips (~300 μm wide uye ~2000 μm long), uye Au (50 nm) electrodes akaiswa pakupisa uchishandisa mumvuri pamativi ese erutivi rurefu. Mitsetse yegraphene yakazoiswa padivi reSEBS elastomer (~2 cm yakafara uye ~5 cm yakareba), ne axis refu yemitsetse yakaenzana nedivi pfupi reSEBS ichiteverwa neBOE (buffered oxide etch) (HF:H2O 1:6) etching uye eutectic gallium indium (EGaIn) semagetsi. Pakuyedzwa kwekusvuta kwakafanana, structure yegraphene isina pattern (~5 × 10 mm) yakaendeswa kune substrates dzeSEBS, nema axes marefu akaenzana nedivi refu resubstrate yeSEBS. Pazviitiko zvese zviri zviviri, G yese (isina G scrolls)/SEBS yakatambanudzwa padivi refu re elastomer muchishandiso chemaoko, uye panzvimbo iyoyo, takayera shanduko dzavo dzekudzivirira pasi pekusvuta paprobe station ne semiconductor analyzer (Keithley 4200-SCS).
Matransistor e-carbon anotambanudzwa uye akajeka ari pa-elastic substrate akagadzirwa nenzira dzinotevera kudzivirira kukuvara kwe-organic solvent yepolymer dielectric ne-substrate. Zvimiro zveMGG zvakatamisirwa kuSEBS sema gate electrodes. Kuti pave ne-uniform thin-film polymer dielectric layer (2 μm thick), mhinduro yeSEBS toluene (80 mg/ml) yakaputirwa pa-octadecyltrichlorosilane (OTS)–modified SiO2/Si substrate pa1000 rpm kwemaminitsi 1. Firimu re-dielectric thin rinogona kutamiswa zviri nyore kubva pamusoro pe-hydrophobic OTS kuenda ku-SEBS substrate yakafukidzwa negraphene yakagadzirwa. Capacitor inogona kugadzirwa nekuisa liquid-metal (EGaIn; Sigma-Aldrich) top electrode kuti ione capacitance sebasa rekumanikidzwa uchishandisa LCR (inductance, capacitance, resistance) meter (Agilent). Chimwe chikamu chetransistor chaive ne polymer-sorted semiconducting CNTs, zvichitevera nzira dzakataurwa kare (53). Ma electrod emagetsi ane mapatani/drain akagadzirwa paSiO2/Si substrates dzakasimba. Zvadaro, zvikamu zviviri, dielectric/G/SEBS neCNTs/patterned G/SiO2/Si, zvakasanganiswa, ndokunyikwa muBOE kubvisa SiO2/Si substrate yakasimba. Saka, ma transistors akajeka uye anotambanudzwa akagadzirwa. Kuedzwa kwemagetsi pasi pekumanikidzwa kwakaitwa pakushandisa manual stretching senzira yambotaurwa.
Zvimwe zvinyorwa zvechinyorwa chino zvinowanikwa pa http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
mufananidzo S1. Mifananidzo ye microscopy ye monolayer MGG paSiO2/Si substrates pahukuru hwakasiyana.
mufananidzo S4. Kuenzanisa kwe two-probe sheet resistances uye transmittances @550 nm ye mono-, bi- uye trilayer plain graphene (ma black squares), MGG (red circles), uye CNTs (blue triangle).
mufananidzo S7. Kuchinja kwakajairwa kwekusagadzikana kweMGGs dze mono- ne bilayer (nhema) ne G (tsvuku) pasi pe ~1000 cyclic strain inotakurwa kusvika ku40 ne90% parallel strain, zvichiteerana.
mufananidzo S10. Mufananidzo weSEM we trilayer MGG paSEBS elastomer mushure mekusvetwa, uchiratidza mupendero murefu we scroll pamusoro pemitswe yakati wandei.
mufananidzo S12. Mufananidzo weAFM we trilayer MGG paSEBS elastomer yakatetepa kwazvo ine 20% strain, ichiratidza kuti mupumburu wakayambuka pamusoro pemutswe.
tafura S1. Kufamba kwe MGG–single-walled carbon nanotube transistors dzine madziro akasiyana pakureba kwenzira isati yatanga uye mushure mekusvuta.
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Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
© 2021 American Association for the Advancement of Science. Kodzero dzese dzakachengetwa. AAAS ishamwari yeHINARI, AGORA, OARE, CHORUS, CLOCKSS, CrossRef uye COUNTER.Science Advances ISSN 2375-2548.
Nguva yekutumira: Ndira-28-2021