Maviri-dimensional zvinhu, senge graphene, anoyevedza kune ese akajairwa semiconductor maapplication uye nascent application mumagetsi anochinjika. Nekudaro, iyo yakakwira kusimba kwesimba regraphene kunokonzeresa kutsemuka pakuderera, zvichiita kuti zviome kutora mukana weayo anoshamisa emagetsi zvivakwa mumagetsi anotambanuka. Kuti tigone kugonesa kuita kwakanakisa kunoenderana nekuita kweakajeka graphene conductor, takagadzira graphene nanoscrolls pakati peakaturikidzana magraphene layer, anonzi akawanda graphene/graphene mipumburu (MGGs). Nekuomerwa, mamwe mipumburu yakabatanidza madomasi akapatsanurwa egraphene kuchengetedza network yepercolating yaigonesa kuita kwakanakisa pamhando dzemhando yepamusoro. Trilayer MGGs inotsigirwa pama elastomers yakachengeta 65% yemaitiro avo epakutanga pa100% strain, iyo inotenderera kune nzira yekuyerera kwazvino, nepo trilayer mafirimu egraphene asina nanoscrolls akachengeta chete 25% yekutanga maitiro avo. Iyo inotambanuka yese-carbon transistor yakagadzirwa ichishandisa MGGs semagetsi airatidza transmittance ye> 90% uye yakachengeta 60% yepakutanga yazvino kubuda pa120% strain (yakafanana negwara rekutakura cheji). Aya anotambanudzwa zvakanyanya uye akajeka ese-kabhoni transistors anogona kugonesa yakaomesesa yakatambanudzwa optoelectronics.
Stretchable transparent electronics inzvimbo iri kukura ine zvakakosha maapplications in advanced biointegrated systems (1, 2) pamwe nekukwanisa kubatanidza ne stretchable optoelectronics (3, 4) kugadzira sophisticated soft robotics and displays. Graphene inoratidza zvinodikanwa zvikuru zvehukobvu hweatomu, kujeka kwepamusoro, uye yakakwirira conductivity, asi kushandiswa kwayo mumashandisirwo anotambanuka kwakadziviswa nemaitiro ayo ekutsemuka padiki diki. Kukunda zvipimo zvemagetsi zvegraphene zvinogona kugonesa kushanda kutsva mumidziyo inotambanuka.
Iyo yakasarudzika zvimiro zvegraphene inoita kuti ive mumiriri akasimba kuchizvarwa chinotevera che transparent conductive electrodes (5, 6). Kuenzaniswa neanonyanya kushandiswa transparent conductor, indium tin oxide [ITO; 100 ohms/square (sq) pa90% transparency], monolayer graphene inokura nemakemikari vapor deposition (CVD) ine musanganiswa wakafanana wekupikisa pepa (125 ohms/sq) uye kujeka (97.4%) (5). Uye zvakare, mafirimu egraphene ane kuchinjika kunoshamisa kana achienzaniswa neITO (7). Semuenzaniso, pane substrate yepurasitiki, maitiro ayo anogona kuchengetwa kunyangwe kubhenda radius ye curvature idiki se 0.8 mm (8). Kuenderera mberi nekusimudzira kushanda kwayo kwemagetsi seanoonekera anochinjika conductor, mabasa apfuura akagadzira graphene hybrid zvinhu zvine imwe -dimensional (1D) sirivheri nanowires kana kabhoni nanotubes (CNTs) (9-11). Uyezve, graphene yakashandiswa semagetsi emusanganiswa dimensional heterostructural semiconductors (senge 2D bulk Si, 1D nanowires/nanotubes, uye 0D quantum dots ) (12), flexible transistors, solar cells, uye light-emitting diodes (LEDs) (13) –23).
Kunyange zvazvo graphene yakaratidza migumisiro inovimbisa yemagetsi anoshanduka, kushandiswa kwayo mumagetsi anotambanuka kwakaderedzwa nemagetsi ayo (17, 24, 25); graphene ine in-ndege kuoma kwe 340 N/m uye Young's modulus ye 0.5 TPa ( 26). Iyo yakasimba kabhoni-kabhoni network haipe chero nzira dzekubvisa simba rekushandisa dhizaini uye nekudaro inotsemuka nyore pane isingasviki 5% dhizaini. Semuenzaniso, CVD graphene inotamirwa pane polydimethylsiloxane (PDMS) elastic substrate inogona chete kuchengetedza maitiro ayo asingasviki 6% dhizaini (8). Theoretical kuverenga kunoratidza kuti kuputsika uye kupindirana pakati pezvikamu zvakasiyana kunofanirwa kudzikisa zvakanyanya kuoma (26). Nekuisa graphene muzvikamu zvakawanda, zvinonzi iyi bi- kana trilayer graphene inotambanuka kusvika pa30% strain, ichiratidza kuramba kushanduka kakapetwa ka13 kudiki pane yemonolayer graphene (27). Nekudaro, kutambanudza uku kuchiri kuderera zvakanyanya kune-ye-iyo-inotambanudzwa c onductors (28, 29).
Transistors akakosha mumashandisirwo anotambanudzwa nekuti anogonesa sophisticated sensor kuverenga uye kuongororwa kwechiratidzo (30, 31). Transistors paPDMS ine multilayer graphene sesosi/drain maelectrodes uye chiteshi zvinhu zvinogona kuchengetedza kushanda kwemagetsi kusvika ku5% strain (32), iyo Yakanyanya pasi pehushoma hunodiwa kukosha (~ 50%) kune zvinopfekeka hutano-yekutarisa sensors uye yemagetsi ganda ( 33, 34). Munguva ichangopfuura, nzira yegraphene kirigami yakaongororwa, uye transistor yakavharwa ne electrolyte yemvura inogona kutambanudzwa kusvika ku240% (35). Nekudaro, iyi nzira inoda yakamiswa graphene, iyo inoomesa maitiro ekugadzira.
Pano, tinowana zvigadziriso zvegraphene zvakatambanudzwa nekubatanidza mipumburu yegraphene (~ 1 kusvika 20 μm kureba, ~ 0.1 kusvika 1 μm yakafara, uye ~ 10 kusvika 100 nm yakakwirira) pakati pegraphene layer. Isu tinofungidzira kuti aya ma graphene mipumburu anogona kupa nzira dzekufambisa dzekubvongodza mitswe mumapepa egraphene, nekudaro kuchengetedza yakakwira conductivity pasi pekunetseka. Iyo graphene mipumburu haidi yekuwedzera synthesis kana maitiro; ivo vakasikwa vakaumbwa panguva yekunyorova yekufambisa nzira. Nokushandisa multilayer G/G (graphene/graphene) mipumburu (MGGs) graphene stretchable electrodes (source/drain and gedhi) uye semiconducting CNTs, takakwanisa kuratidza zvakajeka uye zvinotambanurika zvikuru zvose-carbon transistors, iyo inogona kutambanudzwa kusvika ku120. %. Iyi ndiyo inonyanya kutwasuka yakajeka kabhoni-based transistor kusvika parizvino, uye inopa yakakwana ikozvino kutyaira inorganic LED.
Kuti tigonese mahombe-nzvimbo akajeka anotambanuka magraphene electrode, takasarudza CVD-yakakura graphene paCu foil. Iyo Cu foil yakamiswa pakati peCVD quartz chubhu kubvumira kukura kwegraphene pamativi ese, ichigadzira G/Cu/G zvimiro. Kuendesa graphene, isu takatanga takaruka-yakaputira chidimbu chitete chepoly (methyl methacrylate) (PMMA) kuchengetedza rimwe divi regraphene, iyo yatakatumidza topside graphene (zvichipesana kune rimwe divi regraphene), uyezve, iyo firimu rose (PMMA/top graphene/Cu/bottom graphene) yakanyudzwa mu(NH4)2S2O8 mhinduro yekubvisa Cu foil. Iyo yepasi-parutivi graphene isina iyo PMMA coating ichava isingadzivisiki kuve nekutsemuka uye hurema hunobvumira etchant kupinda nepakati (36, 37). Sezvinoratidzwa muFig. 1A, pasi pekuita kwekukakavadzana kwepamusoro, iyo yakasunungurwa graphene domains yakakungurutswa mumipumburu uye yakazobatanidzwa pane yakasara top-G/PMMA firimu. Iyo yepamusoro-G/G mipumburu inogona kuendeswa pane chero substrate, senge SiO2/Si, girazi, kana nyoro polymer. Kudzokorora iyi nzira yekufambisa kakawanda pane imwechete substrate inopa MGG zvimiro.
(A) Schematic mufananidzo wekugadzira nzira yeMGGs se electrode inotambanuka. Munguva yekufambisa graphene, kuseri kwegraphene paCu foil yakatyorwa pamiganhu nekuremara, yakamoneredzwa kuita zvimiro zvekupokana, uye yakanamirwa zvakasimba pamafirimu epamusoro, ichigadzira nanoscrolls. Yechina katuni inoratidza yakaturikidzana MGG chimiro. (B uye C) High-resolution TEM maitiro e monolayer MGG, achitarisa pane monolayer graphene (B) uye mupumburu (C) nharaunda, zvichiteerana. Iyo inset ye (B) mufananidzo wakaderera-ukuru unoratidza iyo yakazara morphology ye monolayer MGGs pane TEM grid. Insets ye(C) ndiwo maprofiles ekusimba akatorwa pamwe chete nemabhokisi ane rectangular anoratidzwa mumufananidzo, apo nhambwe dziri pakati pemaatomu ndege dziri 0.34 uye 0.41 nm. (D ) Carbon K-edge EEL spectrum ine hunhu hwemifananidzo π* uye σ* mihombe ine zvakanyorwa. e (F kusvika I) Optical microscopy uye AFM mufananidzo s wetrilayer G isina (F uye H) uye ine mipumburu (G uye I) pa300-nm-yakakora SiO2/Si substrates, zvichiteerana. Representative mipumburu uye wrinkles zvakanyorwa kuratidza kusiyana kwavo.
Kuona kuti mipumburu yakakungurutswa graphene muzvisikwa, takaita yakakwirira-resolution transmission electron microscopy (TEM) uye elekitironi kurasikirwa kwesimba (EEL) spectroscopy zvidzidzo pane monolayer pamusoro-G/G mipumburu zvimiro. Mufananidzo 1B unoratidza iyo hexagonal chimiro chemonolayer graphene, uye inset ndeye yakazara morphology yefirimu yakavharwa pane imwechete kabhoni gomba reTEM grid. Iyo monolayer graphene inotenderera yakawanda yegridi, uye mamwe ma graphene flakes muhupo hwezvizhinji zvezvindori zve hexagonal zvindori zvinoonekwa (Fig. 1B). Nekuswededza mumupumburu wega wega (Fig. 1C), takaona huwandu hukuru hwe graphene lattice fringes, nelattice spacing muhuwandu hwe0.34 kusvika 0.41 nm. Zviyero izvi zvinoratidza kuti maflakes anopetwa zvisina tsarukano uye haana kukwana graphite, iyo ine lattice spacing ye 0.34 nm mu "ABAB" layer stacking. Mufananidzo 1D unoratidza kabhoni K-edge EEL spectrum, apo peak pa 285 eV inotangira kubva ku π* orbital uye imwe yacho yakatenderedza 290 eV imhaka yeshanduko ye σ* orbital. Zvinogona kuoneka kuti sp2 bonding inotonga muchimiro ichi, ichiratidza kuti mipumburu ine graphic yakanyanya.
Optical microscopy uye atomic force microscopy (AFM) mifananidzo inopa ruzivo mukuparadzirwa kwegraphene nanoscrolls muMGGs (Fig. 1, E kusvika G, uye maonde. S1 uye S2). Mipumburu yacho inogovaniswa zvisina tsarukano pamusoro pepamusoro, uye iwo mu-ndege density inowedzera zvakaenzanirana nenhamba yezvikamu zvakaturikidzana. Mipumburu mizhinji yakamoneredzwa kuita mapfundo uye inoratidza hurefu husina kufanana pakati pe10 kusvika 100 nm. Iwo akareba 1 kusvika 20 μm uye 0.1 kusvika 1 μm yakafara, zvichienderana nehukuru hwekutanga graphene flakes. Sezvinoratidzwa mumufananidzo 1 (H uye I), mipumburu ine hukuru hwakakura kupfuura makwinya, zvichiita kuti pave nekunyanya rougher interface pakati pegraphene layer.
Kuti tiyere zvimiro zvemagetsi, takagadzira graphene mafirimu ane kana asina mipumburu zvimiro uye layer stacking mu 300-μm-yakafara uye 2000-μm-yakareba mitsetse tichishandisa photolithography. Kaviri-probe resistances sebasa rekutambudzika kwakayerwa pasi pemamiriro ekunze. Kuvapo kwemipumburu kwakaderedza resistivity nokuda monolayer graphene ne 80% chete 2.2% kuderera transmittance (fig. S4). Izvi zvinotsigira kuti nanoscrolls, iyo ine huwandu hwepamusoro hwemazuva ano kusvika ku5 × 107 A / cm2 (38, 39), inoita mupiro wakaisvonaka wemagetsi kuMGGs. Pakati pese mono-, bi-, uye trilayer plain graphene uye MGGs, iyo trilayer MGG ine yakanakisa maitiro nekujeka kunosvika 90%. Kuti tienzanise nezvimwe zvinyorwa zve graphene zvakashumwa mumabhuku, takayerawo mana-probe sheet resistances (fig. S5) uye takavanyora sebasa rekutumira pa 550 nm (fig. S6) muFig. 2A. MGG inoratidza inofananidzwa kana yakakwirira conductivity uye pachena pane artificially stacked multila yer plain graphene uye yakaderedzwa graphene oxide (RGO) (6, 8, 18). Ziva kuti mashizha anopokana neartificially stacked multilayer plain graphene kubva mumabhuku akakwira zvishoma pane aya eMGG yedu, pamwe nekuda kwemamiriro avo ekukura asina kunaka uye nzira yekufambisa.
(A) Ina-probe sheet resistances maringe nekutapurirana pa550 nm yemhando dzinoverengeka dzegraphene, uko mativi matema anoratidza mono-, bi-, uye trilayer MGGs; madenderedzwa matsvuku nemakona matatu ebhuruu anowirirana nemultilayer plain graphene yakakura paCu naNi kubva kuzvidzidzo zveLi et al. (6) uye Kim et al. (8), zvichiteerana, uye yakazoendeswa kuSiO2/Si kana quartz; uye girinhi katatu makoshero eRGO pamadhigirii ekudzikisa akasiyana kubva pakudzidza kwaBonaccorso et al. ( 18 ). (B uye C) Normalized kuramba shanduko ye mono-, bi- uye trilayer MGGs uye G sebasa re perpendicular (B) uye parallel (C) strain kune kutungamira kwekuyerera ikozvino. (D) Normalized kuramba shanduko yebilayer G (tsvuku) uye MGG (dema) pasi pe cyclic strain inotakura kusvika ku50% perpendicular strain. (E) Yakajairwa kuramba shanduko ye trilayer G (tsvuku) uye MGG (dema) pasi pe cyclic strain kurodha kusvika ku90% parallel strain. (F) Normalized capacitance shanduko ye mono-, bi- uye trilayer G uye bi- uye trilayer MGGs sefunctio n yekutambudzika. Iyo inset ndiyo capacitor chimiro, uko iyo polymer substrate iri SEBS uye iyo polymer dielectric layer ndiyo 2-μm-yakakora SEBS.
Kuti tiongorore kushanda-kunoenderana nekunetseka kweMGG, takaendesa graphene pane thermoplastic elastomer styrene-ethylene-butadiene-styrene (SEBS) substrates (~ 2 cm yakafara uye ~ 5 cm kureba), uye conductivity yakayerwa sezvo substrate yakatambanudzwa. (ona Materials and Methods) zvose perpendicular uye parallel kune kutungamira kwekuyerera kwemazuva ano (Fig. 2, B uye C). Mafambiro emagetsi anotsamira pakunetsa akavandudzwa nekubatanidzwa kwenanoscrolls uye kuwedzera nhamba dzegraphene layers. Semuenzaniso, kana kuomerwa kuri perpendicular kune ikozvino kuyerera, kune monolayer graphene, kuwedzera kwemipumburu kwakawedzera kuomarara kwemagetsi kuputsika kubva pa5 kusvika ku70%. Iko kushivirira kwekunetseka kweiyo trilayer graphene zvakare yakavandudzwa zvakanyanya kana ichienzaniswa neiyo monolayer graphene. Ne nanoscrolls, pa100% perpendicular strain, kushorwa kweiyo trilayer MGG chimiro kwakangowedzera ne50%, mukuenzanisa ne300% yetrilayer graphene isina mipumburu. Resistance shanduko pasi pe cyclic strain load ing yakaongororwa. Kuenzanisa (Fig. 2D), kupikisa kwepachena bilayer graphene firimu kwakawedzera pamusoro pe7.5 nguva mushure me ~ 700 cycles pa 50% perpendicular strain uye yakaramba ichiwedzera nekunetseka mumutsara wega wega. Kune rumwe rutivi, kushorwa kwebilayer MGG kwakangowedzera anenge 2.5 nguva mushure me ~ 700 cycles. Kushandisa kusvika ku90% kushungurudza pamwe chete negwaro rakafanana, kushorwa kwetrilayer graphene kwakawedzera ~ 100 nguva mushure me 1000 cycles, asi inongova ~ 8 nguva mu trilayer MGG (Fig. 2E). Mibairo yebhasikoro inoratidzwa mufig. S7. Iko kukurumidza kukurumidza kuwedzera kwekupokana pamwe neyakafanana strain dhizaini imhaka yekuti maratidziro emakatsemuka ari perpendicular kune iyo nzira yekuyerera kwazvino. Kutsauka kwekupokana panguva yekurodha uye kuburitsa dhizaini kunokonzerwa nekudzoreredza viscoelastic kweSEBS elastomer substrate. Iyo yakanyanya kugadzikana kuramba yeMGG mitsetse panguva yebhasikoro imhaka yekuvapo kwemipumburu mikuru iyo inogona kubhuroka zvikamu zvakatsemuka zvegraphene (seyakavharidzirwa neAFM), zvichibatsira kuchengetedza nzira yekuputika. Ichi chiitiko chekuchengetedza conductivity nenzira inoyerera chakambotaurwa nezvesimbi yakatsemuka kana semiconductor mafirimu pane elastomer substrates (40, 41).
Kuti tiongorore mafirimu aya ane graphene-based semagetsi emagetsi emagetsi mumidziyo inotambanudzwa, takavhara graphene layer neSEBS dielectric layer (2 μm gobvu) uye takatarisa kuchinja kwedielectric capacitance sekushanda kwekutambudzika (ona Fig. 2F uye Supplementary Materials for mashoko). Takaona kuti capacitances ine plain monolayer uye bilayer graphene electrodes yakakurumidza kudzikira nekuda kwekurasikirwa kwemu-ndege conductivity yegraphene. Kusiyana neizvi, capacitances gated neMGGs pamwe ne plain trilayer graphene yakaratidza kuwedzera kwe capacitance ne strain, iyo inotarisirwa nekuda kwekuderedzwa kwedielectric gobvu nekunetseka. Iyo inotarisirwa kuwedzera kwe capacitance yakanyatsoenderana neMGG chimiro (fig. S8). Izvi zvinoratidza kuti MGG yakakodzera segedhi regedhi reanotambanuka transistors.
Kuenderera mberi nekuongorora basa re1D graphene scroll pane kushivirira kwemagetsi conductivity uye zvirinani kudzora kupatsanurwa pakati pegraphene layer, takashandisa spray-coated CNTs kutsiva graphene mipumburu (ona Supplementary Materials). Kutevedzera MGG zvimiro, takaisa matatu densities eCNTs (kureva, CNT1
(A kusvika C) AFM mifananidzo yematatu akasiyana densities eCNTs (CNT1
Kuti tiwedzere kunzwisisa kugona kwavo semagetsi emagetsi anotambanudzwa, takaongorora zvakarongeka mamorphology eMGG uye G-CNT-G pasi pekunetseka. Optical microscopy uye scanning erekitironi maikorosikopi (SEM) hadzisi dzinoshanda maitiro ehunhu nekuti ese ari maviri anoshaya musiyano weruvara uye SEM inozviisa pasi pemifananidzo yakagadzirwa panguva yerekitironi scanning kana graphene iri papolymer substrates (fig. S9 uye S10). Kuti titarise in situ iyo graphene pamusoro pasi pekuomerwa, takaunganidza zviyero zveAFM pane trilayer MGGs uye plain graphene mushure mekuendesa kune yakatetepa kwazvo (~ 0.1 mm gobvu) uye elastic SEBS substrates. Nekuda kwekuremara kwemukati muCVD graphene uye kukuvadzwa kwekunze panguva yekuchinjisa maitiro, kuputika kusingadzivisiki kunogadzirwa pane yakaomeswa graphene, uye nekuwedzera kuoma, kuputika kwakava denser (Fig. 4, A kusvika D). Zvichienderana ne stacking chimiro che carbon-based electrodes, kuputika kunoratidza morphologies yakasiyana (fig. S11) (27). Crack area density (inotsanangurwa senzvimbo yekutsemuka / yakaongororwa nzvimbo) ye multilayer graphene ishoma pane iyo monolayer graphene mushure mekuomerwa, iyo inowirirana nekuwedzera kwemagetsi conductivity yeMGGs. Kune rumwe rutivi, mipumburu inowanzocherechedzwa kuti ivhare mitswe, ichipa dzimwe nzira dzekufambisa mufirimu yakasvetwa. Semuenzaniso, sezvakanyorwa mumufananidzo weFig. 4B, mupumburu wakafara wakayambuka pamusoro pekutsemuka mune trilayer MGG, asi hapana mupumburu wakaonekwa mubani graphene (Fig. 4, E kusvika H). Saizvozvo , CNTs uyewo bhiriji makatsemuka ari graphene (fig. S11). The crack area density, scroll area density, uye kushata kwemafirimu zvinopfupikiswa muFig. 4K.
(A kusvika H) In situ AFM mifananidzo ye trilayer G/G mipumburu (A kusvika D) uye trilayer G zvimiro (E kusvika H) pane yakatetepa SEBS (~0.1 mm gobvu) elastomer pa0, 20, 60, uye 100 % dambudziko. Anomiririra makatsemuka uye mipumburu inonongedzwa nemiseve. Yese mifananidzo yeAFM iri munzvimbo ye15 μm × 15 μm, uchishandisa iyo yakafanana color scale bar sezvakanyorwa. (I) Simulation geometry ye patterned monolayer graphene electrodes paSEBS substrate. (J) Simulation contour mepu yehukuru hukuru hwelogarithmic dhizaini mumonolayer graphene uye SEBS substrate pa20% yekunetsa kwekunze. (K) Kuenzanisa kwehupamhi hwenzvimbo yakatsemuka (koramu dzvuku), density yenzvimbo yekupumburudza (yellow column), uye kushata kwepamusoro (blue column) kune akasiyana magraphene zvimiro.
Kana mafirimu eMGG akatambanudzwa, pane imwe nzira yakakosha yekuwedzera iyo mipumburu inogona kubhuroka nzvimbo dzakatsemuka dzegraphene, kuchengetedza network inoputika. Mipumburu yegraphene iri kuvimbisa nekuti inogona kuita makumi emakiromita pakureba uye nekudaro inokwanisa kuvharisa mitswe inowanzoitika kusvika pachiyero chemicrometer. Uyezve, nekuti mipumburu yacho ine multilayers yegraphene, inotarisirwa kuve nekushomeka kushoma. Mukuenzanisa, zvakati dense (yakaderera transmittance) CNT network inodiwa kuti ipe inofananidzwa conductive bridging kugona, sezvo maCNT ari madiki (kazhinji mashoma mamicrometer pakureba) uye mashoma conductive pane mipumburu. Kune rumwe rutivi, sezvinoratidzwa mumufananidzo. S12, nepo graphene inotsemuka panguva yekutatamuka kuti igadzirise kurema, mipumburu haina kutsemuka, zvichiratidza kuti iyo yekupedzisira inogona kunge ichitsvedza pane iri pasi pegraphene. Chikonzero chekuti vasatsemuka chingangove nekuda kwekupetwa-up chimiro, chinoumbwa nezvikamu zvakawanda zvegraphene (~1 kusvika 2 0 μm kureba, ~0.1 kusvika 1 μm yakafara, uye ~10 kusvika 100 nm kureba), iyo ine yakakwira inoshanda modulus pane imwechete-layer graphene. Sezvakataurwa neGreen neHersam (42), metallic CNT network (chubhu dhayamita ye1.0 nm) inokwanisa kuwana kushomeka kweshizha <100 ohms/sq zvisinei nekupokana kukuru pakati peCNTs. Tichifunga kuti mipumburu yedu yegraphene ine hupamhi hwe 0.1 kusvika 1 μm uye kuti mipumburu yeG/G ine nzvimbo dzakakura kwazvo dzekusangana kupfuura CNTs, kupikisa kwekubata uye nzvimbo yekuonana pakati pegraphene nemagraphene mipumburu haifanirwe kuve inodzikamisa zvinhu kuchengetedza yakakwirira conductivity.
Iyo graphene ine yakakwira zvakanyanya modulus kupfuura iyo SEBS substrate. Kunyange zvazvo hukuru hunobudirira hwe graphene electrode yakaderera zvikuru kupfuura iyo ye substrate, kuoma kwegraphene nguva ukobvu hwayo hunofananidzwa neiyo ye substrate (43, 44), zvichiita kuti pave nepakati-yakaoma-island effect. Isu takatevedzera deformation ye1-nm-yakakora graphene pane SEBS substrate (ona Supplementary Materials kuti uwane rumwe ruzivo). Maererano nemigumisiro yekuenzanisa, apo 20% dhizha rinoshandiswa kune SEBS substrate kunze, chiyero chepakati mu graphene ~ 6.6% (Fig. 4J uye fig. S13D), iyo inopindirana nekuongorora kwekuedza (ona fig. S13) . Isu takafananidza kuomerwa kwepattered graphene uye substrate matunhu tichishandisa optical microscopy uye takawana kuomarara munharaunda yesubstrate kuve kaviri kuomarara munharaunda yegraphene. Izvi zvinoratidza kuti kuomarara kunoshandiswa pamagraphene electrode mapatani anogona kuvharirwa zvakanyanya, achigadzira zvitsuwa zvakaomarara zvegraphene pamusoro peSEBS (26, 43, 44).
Naizvozvo, kugona kweMGG electrode kuchengetedza yakakwira conductivity pasi pekunetseka kwakanyanya kunogona kugoneswa nemaitiro maviri makuru: (i) Mipumburu inogona kubhuroka matunhu akadzimwa kuchengetedza conductive percolation nzira, uye (ii) iyo multilayer graphene sheets/elastomer inogona kutsvedza. pamusoro peumwe neumwe, zvichikonzera kuderedzwa kwemagetsi pamagraphene electrodes. Kune akawanda akaturikidzana eakafambiswa graphene pane elastomer, iwo maturu haana kusungirirwa zvakasimba kune mumwe nemumwe, izvo zvinogona kutsvedza mukupindura kunetsana (27). Mipumburu yakawedzerawo kushata kwemavara egraphene, izvo zvinogona kubatsira kuwedzera kupatsanurwa pakati pegraphene layer uye nekudaro kugonesa kutsvedza kwegraphene layer.
Zvese-kabhoni zvishandiso zvinoteedzerwa nechido nekuda kwemutengo wakaderera uye kukwira kwepamusoro. Muchiitiko chedu, ma-carbon transistors akagadzirwa achishandisa gedhi rezasi regraphene, yepamusoro graphene source / drain contact, yakarongedzwa CNT semiconductor, uye SEBS se dielectric (Fig. 5A). Sezvinoratidzwa muFig. 5B, chigadziro chekabhoni yose neCNTs sechitubu / mvura uye gedhi (chigadzirwa chepasi) chinowedzera opaque kupfuura chigadziro chine graphene electrodes (top device). Izvi zvinodaro nekuti CNT network inoda ukobvu hombe uye, nekudaro, yakaderera optical transmittances kuti iwane mashizha kuramba akafanana neiyo yegraphene (fig. S4). Mufananidzo 5 (C uye D) inoratidza mumiriri wekuendesa uye kubuda macurves kusati kwanetsa kune transistor yakagadzirwa nebilayer MGG electrodes. Iyo chiteshi chakafara uye kureba kweiyo isina kudzvanywa transistor yaive 800 uye 100 μm, zvichiteerana. Chiyero chekuyereswa pa/kudzima chinopfuura 103 ine on and off currents pamazinga e10−5 ne10−8 A, zvichiteerana. Iyo inobuda curve inoratidza yakanakira mutsara uye sa turation maredhiyo ane yakajeka gedhi-voltage kutsamira, zvichiratidza kubatana kwakaringana pakati peCNTs uye graphene electrodes (45). Kusangana kupikisa ne graphene electrodes yakaonekwa yakaderera pane iyo ine evaporated Au film (ona fig. S14). Iyo saturation yekufamba kweiyo inotambanuka transistor ndeye 5.6 cm2 / Vs, yakafanana neyeiyo yakafanana polymer-yakarongedzwa CNT transistors pane yakasimba Si substrates ine 300-nm SiO2 sedielectric layer. Kumwe kuvandudzwa kwekufamba kunogoneka ne optimized tube density uye mamwe marudzi emachubhu (46).
(A) Scheme yegraphene-based stretchable transistor. SWNTs, single-walled kabhoni nanotubes. (B) Mufananidzo weiyo inotambanuka transistors yakagadzirwa negraphene electrodes (yepamusoro) uye CNT electrodes (pazasi). Musiyano mukujeka unooneka zvakajeka. (C uye D) Kuendesa uye kubuda macurves eiyo graphene-based transistor paSEBS isati yanetsa. (E naF) Shandura macurves, on and off current, on/off ratio, uye kufamba kwegraphene-based transistor pamhando dzakasiyana.
Kana iyo yakajeka, yese-kabhoni mudziyo wakatambanudzwa munzira inoenderana neyekuchaja nzira yekufambisa, kuderera kudiki kwakaonekwa kusvika ku120% kuomarara. Panguva yekutambanudza, kufamba kwakaramba kuchiderera kubva pa 5.6 cm2 / Vs pa 0% strain kusvika 2.5 cm2 / Vs pa 120% dambudziko (Fig. 5F). Isu takafananidzawo kuita kwetransistor kwehurefu hwakasiyana hwechiteshi (ona tafura S1). Zvinoshamisa, pakuremerwa kwakakura se105%, ese aya ma transistors achiri kuratidza yakakwira on/off reshiyo (>103) uye kufamba (> 3 cm2/Vs). Pamusoro pezvo, takapfupikisa basa rese richangoburwa pane ese-kabhoni transistors (ona tafura S2) (47–52). Nekugadzirisa kugadzirwa kwemudziyo pane elastomers uye kushandisa MGGs sevanobatika, edu ese-kabhoni transistors anoratidza kuita kwakanaka maererano nekufamba uye hysteresis pamwe nekutambanuka zvakanyanya.
Sekushandiswa kweiyo transistor yakajeka uye inotambanuka, takaishandisa kudzora shanduko ye LED (Fig. 6A). Sezvinoratidzwa mumufananidzo 6B, iyo yakasvibirira LED inogona kuoneka zvakajeka kuburikidza neyakatambanudzwa yese-kabhoni mudziyo yakaiswa zvakananga pamusoro. Paunenge uchitambanudzira kusvika ~ 100% (Fig. 6, C uye D), chiedza che LED hachichinji, chinopindirana nekushanda kwe transistor kunotsanangurwa pamusoro apa (ona firimu S1). Uyu ndiwo mushumo wekutanga weanotambanudzwa ekudzora mayunitsi akagadzirwa uchishandisa graphene electrodes, achiratidza mukana mutsva wegraphene inotambanuka magetsi.
(A) Circuit ye transistor kutyaira LED. GND, pasi. (B) Mufananidzo weiyo inotambanuka uye inoonekera yese-kabhoni transistor pa 0% dhiza rakaiswa pamusoro pegirinhi LED. (C) Iyo yose-carbon transparent uye stretchable transistor inoshandiswa kushandura LED iri kuiswa pamusoro pe LED pa 0% (kuruboshwe) uye ~ 100% strain (kurudyi). Miseve michena inonongedza semavara eyero pamudziyo kuratidza shanduko yedaro iri kutatamuka. (D) Kudivi rekuona kweiyo yakatambanudzwa transistor, ine LED inosundirwa mu elastomer.
Mukupedzisa, isu takagadzira yakajeka conductive graphene chimiro chinochengetedza yakakwira conductivity pasi pematanho mahombe semagetsi anotambanuka, anogoneswa negraphene nanoscroll pakati peakaturikidzana graphene layer. Aya ma-bi- and trilayer MGG electrode structures pa elastomer anogona kuchengetedza 21 ne 65%, zvichiteerana, ye 0% strain conductivities pakuita strain yakakwira se100%, zvichienzaniswa nekurasikirwa kwakakwana kwe conductivity pa 5% strain for normal monolayer graphene electrodes. . Iyo yakawedzera conductive nzira dze graphene mipumburu pamwe nekusasimba kwekudyidzana pakati pematanho akatamiswa anobatsira kune yepamusoro conductivity kugadzikana pasi pekunetseka. Isu takawedzera kushandisa iyi graphene chimiro kugadzira ese-kabhoni inotambanuka transistors. Kusvika pari zvino, iyi ndiyo inonyanya kutambanudzwa graphene-based transistor ine yakanakisa kujeka pasina kushandisa buckling. Kunyange zvazvo chidzidzo chezvino chakaitwa kuti graphene ikwanise kutambanudza magetsi, tinotenda kuti nzira iyi inogona kuwedzerwa kune zvimwe zvinhu zve 2D kuti zvigone kutambanudza 2D magetsi.
Yakakura-nzvimbo CVD graphene yakakura payakamiswa Cu foils (99.999%; Alfa Aesar) pasi pekumanikidzwa kusingaperi kwe0.5 mtorr ine 50-SCCM (yakajairwa cubic centimita paminiti) CH4 uye 20-SCCM H2 sevanotangira pa1000°C. Mativi ese ari maviri eCu foil akafukidzwa nemonolayer graphene. Iro rakatetepa rePMMA (2000 rpm; A4, Microchem) yakatenderera-yakaputirwa kune rimwe divi reCu foil, ichigadzira PMMA/G/Cu foil/G chimiro. ipapo, iyo firimu yese yakanyikwa mu 0.1 M ammonium persulfate [(NH4)2S2O8] mhinduro kweinenge maawa maviri kuti ibvise Cu foil. Munguva iyi, iyo isina kudzivirirwa graphene yekumashure yakatanga kubvarura ichitevedza miganhu yezviyo ichibva yapeta kuita mipumburu nekuda kwekunetsana kwepamusoro. Mipumburu yakanamirwa pafirimu rinotsigirwa nePMMA repamusoro regraphene, richigadzira mipumburu yePMMA/G/G. Mafirimu aya akazogezwa mumvura yakasvibiswa kakawanda uye akaiswa pane inotarirwa substrate, yakadai seSiO2 / Si yakaoma kana plastiki substrate. Pakarepo iyo firimu yakabatanidzwa yaoma pane substrate, sampu w yakanyudzwa zvakateedzana muacetone, 1: 1 acetone / IPA (isopropyl alcohol), uye IPA ye30 s imwe neimwe kubvisa PMMA. Mafirimu acho aipisa pa 100 ° C kwemaminitsi gumi nemashanu kana kuti akachengetwa muvhavha usiku hwose kuti abvise zvachose mvura yakavharwa isati yasvika imwe chikamu cheG / G scroll yakaendeswa pairi. Iyi nhanho yaive yekudzivirira kuvharirwa kwefirimu regraphene kubva kune substrate uye kuve nechokwadi chekufukidzwa kwakazara kweMGGs panguva yekuburitswa kwePMMA carrier layer.
Iyo morphology yeMGG chimiro yakaonekwa uchishandisa optical microscope (Leica) uye scanning electron maikorosikopu (1 kV; FEI). Atomic force microscope (Nanoscope III, Digital Instrument) yaishandiswa mukugogodza mumodhi kuti itarise zvizere zvemipumburu yeG. Kujeka kwefirimu kwakaedzwa ne ultraviolet-inooneka spectrometer (Agilent Cary 6000i). Kune bvunzo apo dhiri racho raive parutivi rweperpendicular kutungamira kwekuyerera kwazvino, photolithography uye O2 plasma yakashandiswa kupeteni zvimiro zvegraphene kuita mitsetse (~ 300 μm yakafara uye ~ 2000 μm kureba), uye Au (50 nm) maelectrode akaiswa nemoto uchishandisa. masikisi emumvuri pamigumo miviri yerutivi rurefu. Iyo graphene mitsetse yakabva yaiswa mukubatana neSEBS elastomer (~ 2 cm yakafara uye ~ 5 cm kureba), ine axis refu yemitsetse inofambirana nedivi pfupi reSEBS ichiteverwa neBOE (buffered oxide etch) (HF: H2O 1: 6) etching uye eutectic gallium indium (EGaIn) semagetsi emagetsi. Kuti edze bvunzo dzakafanana, isina kufananidzwa graphene structur es (~ 5 × 10 mm) yakaendeswa kuSEBS substrates, ine matemo marefu anoenderana nedivi refu reSEBS substrate. Pazviitiko zvese zviri zviviri, iyo G yese (isina G mipumburu)/SEBS yakatambanudzwa parutivi rurefu rwe elastomer mune yemaoko, uye in situ, takayera kupikisa kwavo shanduko pasi pekunetsekana pachiteshi chekuongorora chine semiconductor analyzer (Keithley 4200). -SCS).
Iwo anotambanuka zvakanyanya uye akajeka ese-kabhoni transistors pane elastic substrate akagadzirwa neanotevera maitiro kudzivirira organic solvent kukuvara kwepolymer dielectric uye substrate. MGG zvimiro zvakaendeswa kuSEBS semagedhi emagetsi. Kuti uwane yunifomu yakaonda-firimu polymer dielectric layer (2 μm gobvu), SEBS toluene (80 mg/ml) mhinduro yakarukwa-yakavharidzirwa pane octadecyltrichlorosilane (OTS) -yakagadziridzwa SiO2/Si substrate pa1000 rpm kwe1 min. Iyo yakaonda dielectric firimu inogona kutamiswa zviri nyore kubva kune hydrophobic OTS pamusoro ichienda kune SEBS substrate yakafukidzwa neiyo-yakagadzirirwa graphene. A capacitor inogona kugadzirwa nekuisa mvura-metal (EGaIn; Sigma-Aldrich) yepamusoro electrode kuona capacitance sebasa rekutambudzika uchishandisa LCR (inductance, capacitance, resistance) mita (Agilent). Chimwe chikamu chetransistor chaive nepolymer-sorted semiconducting CNTs, ichitevera maitiro akataurwa kare (53). Iyo patterned source/drain electrod es yakagadzirwa paSiO2/Si substrates yakaoma. Zvadaro, zvikamu zviviri, dielectric/G/SEBS uye CNTs/patterned G/SiO2/Si, zvakanamirwa kune mumwe nemumwe, uye zvakanyoroveswa muBOE kubvisa iyo yakaoma SiO2/Si substrate. Saka, iyo yakazara yakajeka uye inotambanuka transistors yakagadzirwa. Kuedzwa kwemagetsi pasi pekunetseka kwakaitwa pabhuku rekugadzirisa kutambanudza senzira yambotaurwa.
Zvekuwedzera zvechinyorwa chino zvinowanikwa pa http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
fig. S1. Optical microscopy mifananidzo ye monolayer MGG paSiO2/Si substrates pane akasiyana magnification.
fig. S4. Kuenzanisa maviri-probe sheet resistances uye transmittances @550 nm ye mono-, bi- uye trilayer plain graphene (black squares), MGG (red denderedzwa), uye CNTs (blue triangle).
fig. S7. Normalized kuramba shanduko ye mono- uye bilayer MGGs (dema) uye G (tsvuku) pasi pe ~ 1000 cyclic strain inotakura kusvika ku40 uye 90% parallel strain, zvichiteerana.
fig. S10. SEM mufananidzo we trilayer MGG paSEBS elastomer mushure mekuomerwa, ichiratidza mupumburu wakareba pamusoro peakatsemuka akati wandei.
fig. S12. AFM mufananidzo wetrilayer MGG pane yakaonda kwazvo SEBS elastomer pa20% dhizaini, zvichiratidza kuti mupumburu wakayambuka pakatsemuka.
tafura S1. Mobilities yebilayer MGG-imwe-yakavakirwa kabhoni nanotube transistors paurefu hwakasiyana chiteshi pamberi uye mushure mekunetsa.
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Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
© 2021 American Association for the Advancement of Science. Kodzero dzese dzakachengetwa. AAAS ishamwari yeHINARI, AGORA, OARE, CHORUS, CLOCKSS, CrossRef uye COUNTER.Science Advances ISSN 2375-2548.
Nguva yekutumira: Jan-28-2021